Substrate processing apparatus and temperature regulation method

A substrate processing apparatus comprising:

• a processing container configured to perform a substrate processing for forming a film on a plurality of substrates;
• a temperature adjustment furnace configured to adjust a temperature of the plurality of substrates accommodated in the processing container for each of a plurality of zones set in advance;
• and
• a controller configured to control an operation of the temperature adjustment furnace,
• wherein the controller includes
• a calculation circuitry configured to calculate a correction temperature for uniformizing a film thickness within a plane of each substrate based on a thermal model held in advance, for each of the plurality of zones,
• a first temperature change amount calculation circuitry configured to calculate a first temperature change amount for each of the plurality of zones based on the correction temperature calculated by the calculation circuitry and the thermal model,
• a second temperature change amount calculation circuitry configured to perform a simulation of a temperature sequence using the correction temperature calculated by the calculation circuitry, thereby calculating a second temperature change amount based on the simulation for each of the plurality of zones,
• a temperature comparison circuitry configured to calculate a temperature difference between the first and second temperature change amounts for each of the plurality of zones,
• a film thickness information calculation circuitry configured to calculate information on a film thickness of a film being formed, for each of the plurality of zones based on the calculated temperature difference, and
• a temperature regulation information calculation circuitry configured to calculate temperature regulation information for uniformizing the film thickness for each of the plurality of zones based on the information on the film thickness.