Continuous spatial atomic layer deposition process and apparatus for applying films on particles

A method of performing atomic layer deposition or chemical vapor deposition on substrate particles in a particle bed comprising a reaction zone defined by:

• more than one spatially separated precursor dosing zones adapted to operate simultaneously, a plurality of inert gas dosing zones positioned in alignment with the spatially separated precursor dosing zones, and adjacent to each of the spatially separated precursor dosing zones;
• and barriers between adjacent precursor dosing zones and inert gas dosing zones, and openings in the barriers located above the particle bed to allow fluid communication of the precursor and inert gases;
• the method comprising:
• a. moving and directing, by a method chosen from vibrational mode, pushing, gravitational force, and a combination thereof, the substrate particles in the particle bed through the reaction zone;
• b. introducing a precursor gas into contact with the substrate particles in the particle bed at each precursor dosing zone, such that the precursor gas reacts at the surface of the substrate particles in said precursor dosing zone to form substrate particles with the atomic layer deposition or the chemical vapor deposition thereon said substrate particles;
• c. collecting an exhaust gas from the head space containing at least one of the following:
• a purge gas, a carrier gas, unreacted precursor and a reaction by-product;
• d. removing the exhaust gas from the head space;
• and
• wherein the inert gas dosing zones are configured to purge excess precursor gases;

A method of performing atomic layer deposition or chemical vapor deposition on a battery material in a particle bed comprising a reaction zone defined by:

• more than one spatially separated precursor dosing zones adapted to operate simultaneously, a plurality of inert gas dosing zones positioned in alignment with the spatially separated precursor dosing zones, and adjacent to each of the spatially separated precursor dosing zones;
• and barriers between adjacent precursor dosing zones and inert gas dosing zones, and openings in the barriers located above the particle bed to allow fluid communication of the precursor and inert gases;
• the method comprising:
• a. moving and directing, by a method chosen from vibrational mode, pushing, gravitational force, and a combination thereof, the battery material in the particle bed through the reaction zone;
• b. introducing a precursor gas into contact with the battery material in the particle bed at each precursor dosing zone, such that the precursor gas reacts at the surface of the battery material in said precursor dosing zone to form battery material with the atomic layer deposition or the chemical vapor deposition thereon said battery material;
• c. collecting an exhaust gas from the head space containing at least one of the following:
• a purge gas, a carrier gas, unreacted precursor and a reaction by-product;
• d. removing the exhaust gas from the head space;
• and
• wherein the inert gas dosing zones are configured to purge excess precursor gases;