Method for formation of conformal ald sio2 films
AssigneeApplied Materials, Inc.
InventorsGeetika BAJAJ, Seshadri GANGULI, Gopi Chandran RAMACHANDRAN, Srinivas GANDIKOTA
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Abstract
Embodiments of the disclosure provide a method of forming a dielectric film in trenches of a substrate. The utilization of the ALD process and introduction of an inhibitor material onto features defining the trenches and into the trenches provides for suppression of forming the dielectric film near the top surface of the features in the trenches. The dielectric film is formed via an ALD process. The ALD process includes sequentially exposing the substrate to an inhibitor material, a first precursor, a purge gas, an oxygen-containing precursor, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the dielectric film.
Claims20
A method of forming a dielectric film within a processing chamber, comprising:
- filling one or more trenches of a substrate during an atomic layer deposition (ALD) process with the dielectric film, wherein the ALD process comprises:
- sequentially exposing the substrate to an inhibitor material, a first precursor, a purge gas in a first purge, an oxygen-containing precursor, and the purge gas in a second purge during an ALD cycle, wherein the inhibitor material suppresses growth of the dielectric film;
- and
- repeating the ALD cycle to fill the trenches with the dielectric film until the dielectric film is at a predetermined thickness.
A method of forming a dielectric film, comprising:
- positioning a substrate in a processing chamber having an interior volume, wherein the substrate includes adjacent features defining a plurality of trenches;
- introducing an inhibitor material on the substrate, wherein a density of the inhibitor material decreases in the trenches from a top surface of the features to a bottom surface of the trenches;
- introducing a first precursor into the interior volume;
- introducing an oxygen-containing precursor into the interior volume, wherein a dielectric film is formed when the first precursor and the oxygen-containing precursor interact;
- and
- filling the trenches with the dielectric film, wherein a rate of growth of the dielectric film on the substrate decreases as the density of the inhibitor material increases.
A method of forming a dielectric film, comprising:
- positioning a substrate in a processing chamber having an interior volume, wherein the substrate includes adjacent features defining a plurality of trenches;
- introducing an inhibitor material on the substrate, wherein a density of the inhibitor material decreases in the trenches from a top surface of the features to a bottom surface of the trenches;
- introducing a first precursor into the interior volume;
- introducing an oxygen-containing precursor into the interior volume, wherein a dielectric film is formed when the first precursor and the oxygen-containing precursor interact;
- repeating the introducing of the inhibitor material, the first precursor, and the oxygen-containing precursor until the dielectric film reaches a predetermined thickness;
- and filling the trenches with the dielectric film, wherein a rate of growth of the dielectric film on the substrate decreases as the density of the inhibitor material increases.
Dependencies are inferred from the claim text.