Chemical mechanical polishing of substrates containing copper and ruthenium
AssigneeBASF SE
InventorsHaci Osman GUEVENC, Michael Lauter, Te Yu Wei, Wei Lan Chiu, Reza M. Golzarian, Julian Proelss, Leonardus Leunissen
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Abstract
The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.
Claims15
-15. (canceled)
A method for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate in the presence of a chemical-mechanical polishing (CMP) composition comprising
- (A) at least one inorganic abrasive particle;
- (B) at least one chelating agent selected from carboxylic acids;
- (C) at least one corrosion inhibitor selected from unsubstituted or substituted triazoles;
- (D) at least one non-ionic surfactant comprising at least one polyoxyalkylene group;
- (E) at least one pad-cleaning agent selected from polymers and co-polymers of acrylic acid, metacrylic acid and maleic acid;
- (F) at least one carbonate or hydrogen carbonate;
- (G) at least one oxidizing agent selected from the group consisting of organic peroxides, inorganic peroxides, persulfates, iodates, periodic acids, periodates, permanganates, perchloric acids, perchlorates, bromic acids and bromates;
- and
- (H) an aqueous medium.
Dependencies are inferred from the claim text.