Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a substrate including a peripheral circuit region and a cell region having a first cell region and a second cell region, the second cell region being farther from the peripheral circuit region than the first cell region;
• a plurality of first conductive lines disposed over the substrate and extending in a first direction;
• a plurality of second conductive lines disposed over the first conductive lines and extending in a second direction that intersects the first direction;
• a plurality of memory cells respectively disposed at intersection regions between the first conductive lines and the second conductive lines;
• and
• a resistance layer disposed between the first conductive line and one or more of the memory cells corresponding to the first conductive line, or between the second conductive line and one or more of the memory cells corresponding to the second conductive line,
• wherein the resistance layer includes a first resistance layer disposed in the first cell region and a second resistance layer disposed in the second cell region,
• wherein the first resistance layer and the second resistance layer include a resistance material, and
• wherein the first resistance layer further includes a dopant that increases a resistivity of the resistance material.

A method for fabricating a semiconductor device, comprising:

• providing a substrate including a peripheral circuit region and a cell region having a first cell region and a second cell region, the second cell region being farther from the peripheral circuit region than the first cell region;
• and
• forming a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction that intersects the first direction, and a plurality of memory cells disposed at intersections regions between the first conductive lines and the second conductive lines, respectively, over the substrate,
• wherein the forming of the memory cells includes forming an electrode layer in each of the memory cells, and
• wherein the forming of the electrode layer includes forming an electrode material layer, doping the electrode material layer in the first cell region with a first dopant for increasing a resistivity of the electrode material layer, and patterning the electrode material layer.

A method for fabricating a semiconductor device, comprising:

• providing a substrate including a peripheral circuit region and a cell region having a first cell region and a second cell region, the second cell region being farther from the peripheral circuit region than the first cell region;
• forming a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction intersecting the first direction, and a plurality of memory cells disposed at intersections regions between the first conductive lines and the second conductive lines, respectively, over the substrate;
• and
• forming a resistance layer between the first conductive line and one or more of the memory cells corresponding to the first conductive line, or between the second conductive line and one or more of the memory cells corresponding to the second conductive line,
• wherein the forming of the resistance layer includes:
• forming a resistance material layer;
• and
• doping the resistance material layer in the first cell region with a dopant that increases a resistivity of the resistance material layer.