Resistive random-access memory devices with compound non-reactive electrodes

A method for fabricating a resistive random-access memory (RRAM) device, comprising:

• fabricating a first electrode, wherein the first electrode comprises:
• a metal nitride layer comprising a metal nitride;
• and
• a metal layer fabricated on the metal nitride layer;
• fabricating a switching oxide layer on the first electrode, wherein the switching oxide layer comprises at least one transition metal oxide, wherein the metal layer comprises a metal that is not reactive to the at least one transition metal oxide;
• and
• fabricating, on the switching oxide layer, a second electrode comprising a conductive material.

A method for fabricating a non-reactive electrode, comprising:

• fabricating an adhesive layer comprising at least one of titanium or tantalum;
• fabricating, on the adhesive layer, a metal nitride layer comprising at least one metal nitride, wherein the metal nitride comprises at least one of titanium nitride or tantalum nitride;
• fabricating, on the metal nitride layer, a metal layer comprises a noble metal;
• and
• selectively removing one or more portions of the adhesive layer, the metal nitride layer, and the metal layer to fabricate the non-reactive electrode.