Semiconductor device
AssigneeSK hynix Inc.
InventorsJeong Hwan SONG, Tae Jung HA
Life of this patent
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Abstract
A semiconductor device may include: a plurality of first conductive lines extending in a first direction; a plurality of second conductive lines spaced apart from the first conductive lines and extending in a second direction intersecting the first direction; and a plurality of memory cells respectively disposed to overlap intersection regions of the plurality of the first conductive lines and the plurality of the second conductive lines; and a layer structured to include an insulating material containing metal ions and formed between each memory cell and at least one of a first conductive line and a second conductive line that intersects with each other at a memory cell.
Claims21
A semiconductor device comprising:
- a plurality of first conductive lines extending in a first direction;
- a plurality of second conductive lines spaced apart from the first conductive lines and extending in a second direction intersecting the first direction;
- and
- a plurality of memory cells respectively disposed to overlap intersection regions of the plurality of the first conductive lines and the plurality of the second conductive lines;
- and
- a layer structured to include an insulating material containing metal ions and formed between each memory cell and at least one of a first conductive line and a second conductive line that intersects with each other at a memory cell.
A semiconductor device comprising:
- a plurality of first conductive lines extending in a first direction;
- a plurality of second conductive lines spaced apart from the first conductive lines and extending in a second direction intersecting the first direction;
- a plurality of memory cells respectively disposed at intersection regions of the first conductive lines and the second conductive lines;
- and
- a layer disposed between any one of the plurality of the memory cells and at least one of a first conductive line and a second conductive line,
- wherein the layer connected to a first memory cell among the plurality of the memory cells has a first state in which the layer has an insulating portion and a conductive portion that are stacked, and
- wherein the layer connected to a second memory cell among the plurality of the memory cells has a second, electrically conductive state.
Dependencies are inferred from the claim text.