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US 2023/0413690 A1Published application
Semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsShih-Wei Su, Da-Jun Lin, Chih-Wei Chang, Bin-Siang Tsai, Ting-An Chien
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Abstract
The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a resistance random access memory on the substrate, an upper electrode, a lower electrode and a resistance conversion layer between the upper electrode and the lower electrode, and a cap layer covering the outer side of the resistance random access memory, the cap layer has an upper half and a lower half, and the upper half and the lower half contain different stresses.
Claims8
A semiconductor structure, comprising:
- a substrate;
- a resistive random access memory (RRAM) located on the substrate, the resistive random access memory comprises an upper electrode, a lower electrode and a resistance conversion layer located between the upper electrode and the lower electrode;
- and
- a cap layer covering an outside of the resistance random access memory, wherein the cap layer has an upper half and a lower half, and the upper half and the lower half contain different stresses.
1 more element
Dependencies are inferred from the claim text.