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US 2023/0413682 A1Published application
Semiconductor structure and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hua LIN, Yao-Wen CHANG
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Abstract
A semiconductor structure includes a bottom electrode, a magnetic tunneling junction stack over the bottom electrode, a top electrode over the magnetic tunneling junction stack, a first dielectric layer under the bottom electrode, a second dielectric layer under the first dielectric layer. The first dielectric layer has a first chemical bond energy and the second dielectric layer has a second chemical bond energy less than the first chemical bond energy.
Claims20
A semiconductor structure, comprising:
- a bottom electrode;
- a magnetic tunneling junction stack over the bottom electrode;
- a top electrode over the magnetic tunneling junction stack;
- a first dielectric layer covered by the bottom electrode;
- and
- a second dielectric layer under the first dielectric layer, wherein the first dielectric layer has a first chemical bond energy and the second dielectric layer has a second chemical bond energy less than the first chemical bond energy.
3 more elements
A method for forming a semiconductor structure, comprising:
- forming a first dielectric layer;
- forming a second dielectric layer over the first dielectric layer;
- forming a via opening extending through the first dielectric layer and the second dielectric layer;
- forming a conductive via in the via opening;
- forming a first conductive layer over the second dielectric layer and the conductive via;
- forming a magnetic tunneling junction stack over the first conductive layer;
- forming a second conductive layer over the magnetic tunneling junction stack;
- forming a mask over the second conductive layer;
- and
- patterning the second conductive layer, the magnetic tunneling junction stack, the first conductive layer, the second dielectric layer, and the first dielectric layer using the mask as a patterning template, wherein the first dielectric layer has a first chemical bond energy and the second dielectric layer has a second chemical bond energy greater than the first chemical bond energy.
7 more elements
A memory structure, comprising:
- a first dielectric layer;
- a second dielectric layer over the first dielectric layer;
- a conductive via extending through the first dielectric layer and the second dielectric layer;
- a first conductive layer over the second dielectric layer and contacting the conductive via, a lower surface of the first conductive layer overhanging an upper surface of the second dielectric layer;
- a magnetic tunneling junction stack over the first conductive layer;
- and
- a second conductive layer over the magnetic tunneling junction stack, wherein the first dielectric layer has a first chemical bond energy and the second dielectric layer has a second chemical bond energy greater than the first chemical bond energy.
4 more elements
Dependencies are inferred from the claim text.