Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler films

A method of fabricating a magnetic random access memory (MRAM) stack comprising:

• forming one or more seed layers comprising:
• forming a chromium (Cr) layer above a substrate;
• forming a templating structure including a crystalline structure over the Cr layer;
• and
• forming a first magnetic layer comprising:
• templating a Heusler compound through the templating structure, wherein:
• the Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.

A magnetic random-access memory (MRAM) array, comprising:

• a plurality of bit lines and a plurality of corresponding complementary bit lines forming a plurality of bit line-complementary bit line pairs;
• a plurality of word lines intersecting the plurality of bit line pairs at a plurality of cell locations;
• a plurality of MRAM cells located at each cell location of the plurality of cell locations, each MRAM cell of the plurality of MRAM cells being electrically connected to a corresponding bit line of the plurality of bit lines and selectively interconnected to a corresponding one of the plurality of the complementary bit lines under control of a corresponding one of the word lines of the plurality of word lines, each MRAM cell of the plurality of MRAM cells comprising:
• a first magnetic layer comprising a Heusler compound;
• and
• one or more seed layers comprising:
• a templating structure comprising a crystalline structure configured to template the Heusler compound, wherein the magnetic layer is formed over the templating structure;
• and
• a chromium (Cr) layer formed under the templating structure, the Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of each MRAM cell of the plurality of MRAM cells.

A computer system comprising:

• one or more processing devices;
• one or more memory devices communicatively and operably coupled to the one or more processing devices, at least one memory device of the one or more memory devices comprising one or more magnetic random access memory (MRAM) devices, each MRAM device of the one or more MRAM devices comprising:
• a first magnetic layer comprising a Heusler compound;
• and
• one or more seed layers comprising:
• a templating structure comprising a crystalline structure configured to template the Heusler compound, wherein the magnetic layer is formed over the templating structure;
• and
• a chromium (Cr) layer formed under the templating structure, the Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of each MRAM device of the one or more MRAM devices.