Display device and method of manufacturing the same

A display device comprising:

• a first conducive layer disposed on a base part and including a first wiring and a second wiring spaced apart from each other;
• a semiconductor layer disposed on the first conductive layer and including a first semiconductor part and a second semiconductor part disposed on a first side of the first semiconductor part in a first direction;
• a gate insulating layer disposed on the semiconductor layer;
• and
• a gate conductive layer disposed on the gate insulating layer and including a gate electrode overlapping the first semiconductor part in a thickness direction of the base part, and a first connecting electrode overlapping the second semiconductor part in the thickness direction, wherein
• the second semiconductor part includes a semiconductor opening, which penetrates the second semiconductor part,
• the first connecting electrode is directly connected to the second semiconductor part,
• the first connecting electrode includes a (1-1)-th connecting electrode and a (1-2)-th connecting electrode electrically connected to each other, and
• the (1-2)-th connecting electrode protrudes from a side of the (1-1)-th connecting electrode toward the semiconductor opening.

A method of manufacturing a display device, comprising:

• forming a semiconductor layer including a first semiconductor part and a second semiconductor part disposed on a first side of the first semiconductor part in a first direction, on a base part;
• forming a gate insulating layer including an insulating recess, which overlaps the second semiconductor part in a thickness direction of the base part, on the semiconductor layer;
• forming a gate conductive layer on the gate insulating layer;
• disposing a photoresist on the gate conductive layer;
• and
• forming a gate electrode and a first connecting electrode including a (1-1)-th connecting electrode and a (1-2)-th connecting electrode, which protrudes from the (1-1)-th connecting electrode in the first direction, in a plan view, by etching the gate conductive layer using the photoresist.