Semiconductor Device, Display Device, Display Module, and Electronic Device

Abstract

Parasitic capacitance of a wiring in a display device is decreased. A display device having both a high definition and a high frame frequency is provided. A high-resolution display device is provided. A semiconductor device used in the display device includes a first resin layer between a first wiring and a transistor, a first insulating layer between the first resin layer and the transistor, a second resin layer between the transistor and a second wiring, and a second insulating layer between the second resin layer and the transistor. The first insulating layer and the second insulating layer include an inorganic insulating film containing nitrogen. Furthermore, the first resin layer and the second resin layer have lower permittivities than the first insulating layer and the second insulating layer, respectively, and are greater than or equal to five times and less than or equal to 100 times as thick as the first insulating layer and the second insulating layer, respectively.

Dependencies are inferred from the claim text.