Display apparatus and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsDongyeon Cho, Kihyun Kim, Younggil Park
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Abstract
A display apparatus includes a thin film transistor including a semiconductor pattern including an oxide semiconductor and a gate electrode overlapping the semiconductor pattern, a first interlayer insulating layer on the semiconductor pattern and the gate electrode, and a connection electrode on the first interlayer insulating layer and contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer, wherein the connection electrode entirely covers the gate electrode in a plan view, and an end portion of the gate electrode is spaced apart from the contact hole by a first distance.
Claims20
A display apparatus comprising:
- a thin film transistor comprising a semiconductor pattern comprising an oxide semiconductor and a gate electrode overlapping the semiconductor pattern;
- a first interlayer insulating layer on the semiconductor pattern and the gate electrode;
- and
- a connection electrode on the first interlayer insulating layer and contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer,
- wherein the connection electrode entirely covers the gate electrode in a plan view, and
- an end portion of the gate electrode is spaced apart from the contact hole by a first distance.
A display apparatus comprising:
- a thin film transistor comprising a semiconductor pattern comprising an oxide semiconductor and a gate electrode overlapping the semiconductor pattern;
- a first interlayer insulating layer on the semiconductor pattern and the gate electrode;
- a third interlayer insulating layer on the first interlayer insulating layer and having a higher density than the first interlayer insulating layer;
- and
- a connection electrode contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer and the third interlayer insulating layer,
- wherein the connection electrode entirely covers the gate electrode in a plan view.
A method of manufacturing a display apparatus, the method comprising:
- forming, on a substrate, a lower metal layer and a buffer layer covering the lower metal layer;
- forming, on the buffer layer, a semiconductor pattern, a gate electrode, and a first interlayer insulating layer covering the gate electrode;
- forming a connection electrode on the first interlayer insulating layer, contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer, and entirely covering the gate electrode on a plane;
- and
- forming a second interlayer insulating layer covering the connection electrode.
Dependencies are inferred from the claim text.