Display device and manufacturing method thereof
AssigneeLG Display Co., Ltd.
InventorsKwangIl YANG, KiYoung JUNG
Life of this patent
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Abstract
A display device and a manufacturing method thereof are discussed. The display device can include a buffer layer on a substrate, an active layer, a first conductor in the first region of the active layer, and a second conductor in the second region of the active layer. The surface roughness of a portion of the upper surface of the buffer layer overlapping the active layer and the surface roughness of a portion of the upper surface of the buffer layer not overlapping the active layer can be the same as, or different in a predetermined range from, each other. As a result, the reliability and characteristics of elements over the buffer layer can be improved.
Claims22
A display device comprising:
- a buffer layer located on a substrate;
- an active layer located located on the buffer layer, and including a channel region, a first region located on a first side of the channel region, and a second region located on a second side of the channel region;
- a first conductor located on the first region of the active layer;
- and
- a second conductor located on the second region of the active layer,
- wherein in the buffer layer,
- a portion of an upper surface overlapping the active layer has a first surface roughness, and
- a portion of the upper surface not overlapping the active layer has a second surface roughness, and
- wherein the first surface roughness and the second surface roughness are same, or are different in a predetermined range from each other.
A method of manufacturing a display device, the method comprising:
- forming a buffer layer on an entire surface of a substrate;
- forming an active layer on an entire upper surface of the buffer layer;
- forming a conductive material layer on an entire upper surface of the active layer;
- whiling forming one or more photoresist patterns on the conductive material layer, forming a photoresist pattern in a transistor area comprising a channel forming region, a first electrode forming region, and a second electrode forming region;
- while removing one or more portions of the conductive material layer, removing a portion of the conductive material layer not overlapping the one or more photoresist patterns;
- and
- while removing respective one or more portions of the one or more photoresist patterns, removing a portion of the photoresist pattern located in the channel forming region of the transistor area,
- wherein the removing of the respective one or more portions of the one or more photoresist patterns is performed in a situation where the active layer is formed on the entire upper surface of the buffer layer.
Dependencies are inferred from the claim text.