Microelectronic devices, and related methods and memory devices

A method of forming a microelectronic device, comprising:

• forming a microelectronic device structure comprising:
• control logic circuitry;
• a 3D NAND Flash memory array overlying and in electrical communication with the control logic circuitry;
• and
• dielectric oxide material overlying the 3D NAND Flash memory array;
• bonding an additional microelectronic device structure to the dielectric oxide material of the microelectronic device structure, the additional microelectronic device structure comprising semiconductor material and additional dielectric oxide material vertically neighboring the semiconductor material;
• forming additional control logic circuitry partially within the semiconductor material and in electrical communication with the 3D NAND Flash memory array;
• and
• forming a cross-point memory array over and in electrical communication with the additional control logic circuitry.

A memory device, comprising:

• control logic devices configured to operate at applied voltages greater than about 1.2 V;
• additional control logic devices vertically overlying the control logic devices and configured to operate at additional applied voltages within a range of from about 0.7 V to about 1.2 V;
• vertically extending strings of memory cells vertically interposed between and operatively associated with the control logic devices and the additional control logic devices;
• and
• resistance variable memory cells vertically overlying the additional control logic devices and operatively associated with the control logic devices and the additional control logic devices.