Device for driving transistors and method of driving

A transistor control device comprising:

• a substrate based on a semiconductive material, having a first type of conductivity (P),
• an insulating layer based on a dielectric material on the substrate,
• an active layer based on the semiconductive material, located on the insulating layer,
• a plurality of transistors each comprising a channel formed in the active layer and configured to be fully depleted,
• a plurality of first wells formed in the substrate and having a first type of conductivity, each first well being associated with and disposed under a group of transistors of the plurality of transistors,
• at least one second well having a second type of conductivity, formed in the substrate under and around the plurality of first wells, so as to isolate the plurality of first wells from one another and vis-à-vis the substrate, the at least one second well comprising one or more first wells each having only the first type of conductivity, and
• a bias circuit configured to apply at least one first bias voltage to the plurality of first wells, and at least one second bias voltage to the at least one second well,
• wherein all of the transistors of the plurality of transistors have the second type of conductivity.