Selector device and semiconductor device including the same

A semiconductor device comprising:

• a first electrode layer;
• a second electrode layer disposed over the first electrode layer to be spaced apart from the first electrode layer;
• a selector layer disposed between the first electrode layer and the second electrode layer and configured to perform a threshold switching operation by trapping conductive carriers or releasing trapped conductive carriers depending on an external voltage applied to the selector layer;
• a memory layer disposed under the first electrode layer or over the second electrode layer to be connected in series with the selector layer such that the selector layer is operated to switch on or off an electrical path to the memory layer;
• and
• one or more barrier layers disposed between the first electrode layer and the selector layer, or between the selector layer and the second electrode layer, or both between the first electrode layer and the selector layer and between the selector layer and the second electrode layer,
• wherein at least one of the one or more barrier layers includes a two-dimensional layered material.