Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChih-Wei Kuo, Tai-Cheng Hou, Yu-Tsung Lai, Jiunn-Hsiung Liao
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Abstract
A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first top electrode on the first MTJ and a second top electrode on the second MTJ, a first spacer and a second spacer around the first MTJ, a third spacer and a fourth spacer around the second MTJ, a passivation layer between the second spacer and the third spacer as a top surface of the passivation layer includes a V-shape, and an ultra low-k (ULK) dielectric layer on the passivation layer and around the first MTJ and the second MTJ.
Claims7
A semiconductor device, comprising:
- a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate;
- a first top electrode on the first MTJ and a second top electrode on the second MTJ;
- a first spacer and a second spacer around the first MTJ;
- a third spacer and a fourth spacer around the second MTJ;
- a passivation layer between the second spacer and the third spacer, wherein a top surface of the passivation layer comprises a V-shape;
- and
- an ultra low-k (ULK) dielectric layer on the passivation layer and around the first MTJ and the second MTJ.
Dependencies are inferred from the claim text.