Semiconductor memory device
AssigneeKioxia Corporation
InventorsRyotaro Yamamoto, Kojiro Shimizu
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Abstract
According to one embodiment, a semiconductor memory device includes a stacked body including a first stacked portion including lower conductive layers stacked in a first direction and including a first stairs portion having a first end portion stepwise processed, and a second stacked portion provided on an upper side of the first stacked portion and including upper conductive layers stacked in the first direction and including a second stairs portion located above the first stairs portion and having a second end portion stepwise processed, and a first lower contact passing through the second stairs portion and connected to a portion of a first lower conductive layer, the portion being included in the first stairs portion.
Claims20
A semiconductor memory device comprising:
- a stacked body including:
- a first stacked portion including a plurality of lower conductive layers stacked to be apart from each other in a first direction, the first stacked portion including a first stairs portion having a first end portion stepwise processed along a second direction crossing the first direction;
- and a second stacked portion provided on an upper side of the first stacked portion and including a plurality of upper conductive layers stacked to be apart from each other in the first direction, the second stacked portion including a second stairs portion located above the first stairs portion and having a second end portion stepwise processed along the second direction;
- a first pillar structure including a semiconductor layer extending in the first direction in the stacked body;
- and
- a first lower contact passing through the second stairs portion, the first lower contact being connected to a portion of a first lower conductive layer of the plurality of lower conductive layers, the portion of the first lower conductive layer being included in the first stairs portion.
A semiconductor memory device comprising:
- a stacked body including:
- a first stacked portion including a plurality of lower conductive layers stacked to be apart from each other in a first direction, the first stacked portion including a first stairs portion having a first end portion stepwise processed along a second direction crossing the first direction;
- and a second stacked portion provided on an upper side of the first stacked portion and including a plurality of upper conductive layers stacked to be apart from each other in the first direction, the second stacked portion including a second stairs portion located above the first stairs portion and having a second end portion stepwise processed along the second direction;
- a first pillar structure including a semiconductor layer extending in the first direction in the stacked body;
- a first lower contact passing through a first through hole formed in the second stairs portion and connected to a portion of a first lower conductive layer of the plurality of lower conductive layers, the portion of the first lower conductive layer being included in the first stairs portion;
- and
- a second lower contact passing through a second through hole formed in the second stairs portion and connected to a portion of a second lower conductive layer of the plurality of lower conductive layers, the portion of the second lower conductive layer being included in the first stairs portion.
Dependencies are inferred from the claim text.