Three-dimensional semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSung Min Hwang, Joon Sung Lim, Bum Kyu Kang, Jae Ho Ahn
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Abstract
A three-dimensional semiconductor device includes a first gate group on a lower structure and a second gate group on the first gate group. The first gate group includes first pad regions that are: (1) lowered in a first direction that is parallel to an upper surface of the lower structure and (2) raised in a second direction that is parallel to an upper surface of the lower structure and perpendicular to the first direction. The second gate group includes second pad regions that are sequentially raised in the first direction and raised in the second direction.
Claims20
A semiconductor device comprising:
- a lower structure;
- a stacked structure disposed in a first region and a second region and on the lower structure, the stacked structure including gate patterns stacked in a vertical direction, perpendicular to an upper surface of the lower structure, the stacked structure having a stepped shape in the second region;
- and
- vertical channel structures disposed on the lower structure and penetrating through the gate patterns of the stack structure in the first region,
- wherein the stepped shape of the stacked structure includes a first upwardly stepped region, a first cliff region, a downwardly stepped region, a second cliff region, and a second upwardly stepped region that are sequentially arranged in the second region in a first direction,
- wherein the first upwardly stepped region has an upper end at a first height level and a lower end at a second height level, and
- wherein a distance between an upper end of the first cliff region and a lower end of the first cliff region is greater than a height difference between the first height level and the second height level.
A semiconductor device comprising:
- a lower structure including a first substrate, a peripheral circuit structure on the first substrate, and a second substrate on the peripheral circuit structure;
- a stacked structure disposed in a first region and a second region and on the lower structure, the stacked structure including gate patterns stacked in a vertical direction, perpendicular to an upper surface of the lower structure, the stacked structure having a stepped shape in the second region;
- and
- vertical channel structures disposed on the lower structure and penetrating through the gate patterns of the stack structure in the first region,
- wherein the stepped shape of the stacked structure includes a first upwardly stepped region, a first cliff region, a downwardly stepped region, a second cliff region, and a second upwardly stepped region that are sequentially arranged in the second region in a first direction,
- wherein each of the gate patterns includes a gate portion and a pad portion extending from the gate portion,
- wherein the first upwardly stepped region includes first pad portions of the pad portions,
- wherein the downwardly stepped region includes second pad portions of the pad portions,
- wherein the second upwardly stepped region includes third pad portions of the pad portions,
- wherein a lower end of the first cliff region is at a lower level than a lowermost first pad portion of the first pad portions, and
- wherein an upper end of the first cliff region is at a higher level than the lowermost first pad portion of the first pad portions.
Dependencies are inferred from the claim text.