US 2023/0413536 A1 · SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract

Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate provided with a plurality trenches arranged at intervals; a bit line at least located on a sidewall of the trench, wherein both the bit line and the trench extend along a first direction; a bit line isolation layer filled in the trench; a plurality of first semiconductor pillars arranged at intervals on a surface of the substrate; a plurality of word lines arranged at intervals, wherein the word lines are separated from the substrate and cover the first semiconductor pillars by a certain height, the word line extends along a second direction, and the second direction is different from the first direction; and a dielectric layer at least located between the first semiconductor pillar and the word line.

Claims15

Dependent claims

A semiconductor structure, comprising:

a substrate provided with a plurality of trenches arranged at intervals;
a bit line at least located on a sidewall of the trench, wherein both the bit line and the trench extend along a first direction;
a bit line isolation layer filled in the trench;
a plurality of first semiconductor pillars arranged at intervals on a surface of the substrate;
a plurality of word lines arranged at intervals, wherein the word lines are separated from the substrate and cover the first semiconductor pillars by a certain height, the word line extends along a second direction, and the second direction is different from the first direction;
and
a dielectric layer at least located between the first semiconductor pillar and the word line.

4 more elements

A method of manufacturing a semiconductor structure, comprising:

providing a substrate;
forming a plurality of trenches arranged at intervals in the substrate;
forming a bit line at least located a sidewall of the trench, wherein both the bit line and the trench extend along a first direction;
forming a bit line isolation layer filled in the trench;
after forming the bit line isolation layer, forming a plurality of first semiconductor pillars arranged at intervals on a surface of the substrate;
forming a dielectric layer, wherein the dielectric layer covers a sidewall of the first semiconductor pillar by a certain height;
and
forming a plurality of word lines arranged at intervals, wherein the word lines are separated from the substrate, the word lines cover the first semiconductor pillars by a certain height and at least a part of the dielectric layer, the word lines extend along a second direction, and the second direction is different from the first direction.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and manufacturing method thereof

Life of this patent

Semiconductor structure and manufacturing method thereof

Life of this patent

Abstract

Claims15