Semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorMin LI
Life of this patent
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Abstract
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged in an array and an isolation structure separating the active regions, where the substrate has a first surface and a second surface opposite to each other; a buried word line structure, located at a side, close to the second surface, in the substrate and embedded in the active regions; a bit line structure, located on the first side of the substrate and electrically connected to the active regions; and capacitor structures, located on the second surface of the substrate and correspondingly connected to the active regions in a one-to-one manner.
Claims17
A semiconductor structure, comprising:
- a substrate, comprising active regions arranged in an array and an isolation structure separating the active regions, wherein the substrate has a first surface and a second surface opposite to each other;
- a buried word line structure, located at a side, close to the second surface, in the substrate and embedded in the active regions;
- a bit line structure, located on the first surface of the substrate and electrically connected to the active regions;
- and
- capacitor structures, located on the second surface of the substrate and correspondingly connected to the active regions in a one-to-one manner.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate, wherein the substrate comprises active regions arranged in an array and an isolation structure separating the active regions, and the substrate has a first surface and a second surface opposite to each other;
- forming a buried word line structure, wherein the buried word line structure is located at a side, close to the second surface, in the substrate and is embedded in the active regions;
- forming a bit line structure, wherein the bit line structure is located on the first surface of the substrate and electrically connected to the active regions;
- and
- forming capacitor structures, wherein the capacitor structures are located on the second surface of the substrate and correspondingly connected to the active regions in a one-to-one manner.
Dependencies are inferred from the claim text.