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US 2023/0413518 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSeung Hwan KIM
Life of this patent
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Abstract
A semiconductor device includes: a plurality of word line pad portions that are stacked over a lower structure in a direction perpendicular to a surface of the lower structure; horizontal-level dielectric layers between the word line pad portions; and bridge prevention layers disposed between the word line pad portions and covering ends of the horizontal-level dielectric layers.
Claims20
A semiconductor device, comprising:
- a plurality of word line pad portions stacked over a lower structure in a direction perpendicular to a surface of the lower structure;
- dielectric layers disposed between the word line pad portions;
- and
- bridge prevention layers disposed between the word line pad portions and covering ends of the dielectric layers.
1 more element
A semiconductor device, comprising:
- a word line stack including a plurality of word lines stacked over a lower structure in a direction perpendicular to a surface of the lower structure;
- a word line pad portion defined at an end of the word line stack;
- dielectric layers disposed between the word line pad portions;
- bridge prevention layers disposed between the word line pad portions and covering ends of the dielectric layers;
- and
- contact plugs respectively coupled to the word line pad portions.
3 more elements
Dependencies are inferred from the claim text.