Solid-state imaging element, electronic device, and control method of solid-state imaging element
AssigneeSony Semiconductor Solutions Corporation
InventorYOSHIMICHI KUMAGAI
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Abstract
A solid-state imaging element (1) according to the present disclosure includes a photoelectric conversion unit, a transfer transistor (TY), and an internal gate (PY). The photoelectric conversion unit photoelectrically converts incident light. The transfer transistor (TY) transfers a charge generated by the photoelectric conversion unit. The internal gate (PY) is disposed adjacent to the transfer transistor (TY) inside the photoelectric conversion unit and deepens the potential of at least a partial region in the photoelectric conversion unit.
Claims10
A solid-state imaging element comprising:
- a photoelectric conversion unit that photoelectrically converts incident light;
- a transfer transistor that transfers a charge generated by the photoelectric conversion unit;
- and
- an internal gate that deepens a potential of at least a partial region in the photoelectric conversion unit, the internal gate being disposed adjacent to the transfer transistor inside the photoelectric conversion unit.
An electronic device comprising:
- a solid-state imaging element;
- an optical system that captures incident light from a subject and forms an image on an imaging plane of the solid-state imaging element;
- and
- a signal processing circuit that performs processing on an output signal from the solid-state imaging element,
- wherein the solid-state imaging element comprises:
- a photoelectric conversion unit that photoelectrically converts the incident light;
- a transfer transistor that transfers a charge generated by the photoelectric conversion unit;
- and
- an internal gate that deepens a potential of at least a partial region in the photoelectric conversion unit, the internal gate being disposed adjacent to the transfer transistor inside the photoelectric conversion unit.
A control method of a solid-state imaging element, the method comprising:
- a charge accumulation step of accumulating a charge generated by a photoelectric conversion unit by incident light in the photoelectric conversion unit;
- and
- a charge transfer step of transferring the charge accumulated in the photoelectric conversion unit by operating a transfer transistor,
- wherein the charge transfer step comprises a step of deepening a potential of a region adjacent to the transfer transistor in the photoelectric conversion unit.
Dependencies are inferred from the claim text.