# US 2023/0411560 A1 · Light emitting element, display device including the same, and method of fabricating light emitting element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0411560 A1 - Document ID: US20230411560A1 - Status: Published application - Kind: A1 - Application number: 18/101,711 - Filed: 2023-01-26 - Published: 2023-12-21 - Earliest claimed: 2022-05-31 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., LTD. - Inventors: Hye Lim KANG; Si Sung KIM; Hyung Seok KIM; Dong Eon LEE; Jong Jin LEE - Web page: https://patentgrep.com/patent/US20230411560A1 ## CPC - H10H 20/8312: {extending at least partially through the bodies} - H10W 90/00: Package configurations - H10H 20/01: Manufacture or treatment - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/831: characterised by their shape - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/8321: {characterised by their shape} - H10H 29/842: {Coatings, e.g. passivation layers or antireflective coatings} - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 29/857: {Interconnections (of active-matrix LED displays H10H29/49)} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting element includes a first semiconductor layer, a light emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light emitting layer, an electrode layer disposed on the second semiconductor layer, and an insulative film. The insulative film surrounds side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer, and surrounds a portion of the electrode layer at a first end portion at which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer, and a second surface facing the first surface, the second surface having a width greater than a width of the first surface. ## Claims ### Claim 1 A light emitting element comprising: a first semiconductor layer; a light emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light emitting layer; an electrode layer disposed on the second semiconductor layer; and an insulative film surrounding side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer, the insulative film surrounding a portion of the electrode layer at a first end portion at which the electrode layer is disposed, wherein the electrode layer includes: a first surface adjacent to the second semiconductor layer; and a second surface facing the first surface, the second surface having a width greater than a width of the first surface. ### Claim 2 (depends on 1) The light emitting element of claim 1, wherein the width of the second surface of the electrode layer is greater than or equal to a width of an upper surface of the second semiconductor layer, which contacts the first surface of the electrode layer. ### Claim 3 (depends on 2) The light emitting element of claim 2, wherein the width of the first surface of the electrode layer is smaller than or equal to the width of the upper surface of the second semiconductor layer. ### Claim 4 (depends on 1) The light emitting element of claim 1, wherein the electrode layer further includes a side surface extending from the first surface to the second surface, and the side surface of the electrode layer has a slope corresponding to an angle in a range of about 90 degrees to about 135 degrees with respect to the first surface. ### Claim 5 (depends on 1) The light emitting element of claim 1, wherein the insulative film has a thickness changed at the first end portion. ### Claim 6 (depends on 5) The light emitting element of claim 5, wherein the insulative film has a thickness increasing as becoming closer to the first surface of the electrode layer from the second surface of the electrode layer. ### Claim 7 (depends on 1) The light emitting element of claim 1, wherein a concave groove is formed in the electrode layer at a boundary at which the electrode layer contacts the second semiconductor layer. ### Claim 8 (depends on 1) The light emitting element of claim 1, wherein the insulative film completely surrounds side surfaces of the light emitting layer and the second semiconductor layer. ### Claim 9 (depends on 1) The light emitting element of claim 1, wherein the first surface of the electrode layer directly contacts the second semiconductor layer. ### Claim 10 (depends on 9) The light emitting element of claim 9, wherein the insulative film surrounds at least a portion of the side surface of the electrode layer, which is located at a periphery of the first surface of the electrode layer, and the insulative film exposes the second surface of the electrode layer. ### Claim 11 (depends on 1) The light emitting element of claim 1, wherein the insulative film exposes a lower surface of the first semiconductor layer. ### Claim 12 (depends on 1) The light emitting element of claim 1, wherein the first semiconductor layer includes a first part adjacent to the light emitting layer and a second part except the first part, and a width at the first part is greater than a width at the second part. ### Claim 13 (depends on 12) The light emitting element of claim 12, wherein the insulative film has a thickness at a portion surrounding the second part of the first semiconductor layer, which is greater than a thickness at a portion surrounding the first part of the first semiconductor layer. ### Claim 14 A display device comprising: a pixel including: a first electrode; a second electrode; and a light emitting element including a first end portion electrically connected to the first electrode and a second end portion electrically connected to the second electrode, wherein the light emitting element includes: a first semiconductor layer, a light emitting layer, a second semiconductor layer, and an electrode layer, which are sequentially disposed in a direction from the second end portion to the first end portion; and an insulative film surrounding side surfaces of the first semiconductor layer, the light emitting layer, the second semiconductor layer, and the electrode layer, and the electrode layer includes: a first surface adjacent to the second semiconductor layer; and a second surface facing the first surface, the second surface having a width greater than a width of the first surface. ### Claim 15 (depends on 14) The display device of claim 14, wherein the insulative film completely surrounds side surfaces of the light emitting layer and the second semiconductor layer. ### Claim 16 (depends on 14) The display device of claim 14, wherein the first surface of the electrode layer directly contacts the second semiconductor layer, and the insulative film surrounds at least a portion of the side surface of the electrode layer, which is located at the periphery of the first surface of the electrode layer, and the insulative film exposes the second surface of the electrode layer. ### Claim 17 A method of fabricating a light emitting element, the method comprising: sequentially forming a first semiconductor layer, a light emitting layer, and a second semiconductor layer on a substrate; sequentially forming a mask layer and an etch pattern on the second semiconductor layer; patterning, in a rod shape, a stack structure including the first semiconductor layer, the light emitting layer, and the second semiconductor layer through an etching process using the mask layer and the etch pattern; forming an electrode layer on the second semiconductor layer; forming an insulative film on side surfaces of the first semiconductor layer, the light emitting layer, the second semiconductor layer, and the electrode layer; and separating, from the substrate, a light emitting element including the stack structure and the insulative film provided on a side surface of the stack structure, wherein, in the forming of the electrode layer, the electrode layer is etched such that the side surface of the electrode layer has a slope corresponding to an angle in a range of about 90 degrees to about 135 degrees with the substrate. ### Claim 18 (depends on 17) The method of claim 17, wherein the forming of the electrode includes: entirely forming the electrode layer on a surface of the substrate on which the stack structure is formed; performing heat treatment on the electrode layer; and etching the heat-treated electrode layer. ### Claim 19 (depends on 18) The method of claim 18, wherein a first surface of the electrode layer, which is adjacent to the second semiconductor layer, and a second surface of the electrode layer, which faces the first surface, are etched at different speeds by the heat treatment. ### Claim 20 (depends on 19) The method of claim 19, wherein a width of the second surface of the electrode layer is greater than or equal to a width of an upper surface of the second semiconductor layer, which contacts the first surface.