# US 2023/0411549 A1 · Multilayer high voltage radiation hard interconnections

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- Number: US 2023/0411549 A1
- Document ID: US20230411549A1
- Status: Published application
- Kind: A1
- Application number: 18/074,912
- Filed: 2022-12-05
- Published: 2023-12-21
- Earliest claimed: 2018-04-24
- Assignees: Advanced Research Corporation
- Applicants: Advanced Research Corporation
- Inventors: Greg Wagner; Joe Tersteeg
- Web page: https://patentgrep.com/patent/US20230411549A1

## CPC

- H10F 30/295: Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
- H10F 77/206: {for devices having potential barriers}
- H10F 71/134: {Irradiation with electromagnetic or particle radiation}
- H10F 77/306: {for devices having potential barriers}
- H10F 77/933: {for devices having potential barriers}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Various methods and systems are provided for three layer photolithography. In one embodiment, a process includes disposing a radiation hard dielectric layer on a substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation and/or at least 4×1015 of 1 MeV equivalent neutron radiation; patterning the radiation hard dielectric layer; and treating the radiation hard dielectric layer. In one embodiment, a device includes a substrate and a patterned radiation hard dielectric layer disposed on the substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation and/or at least 4×1015 of 1 MeV equivalent neutron radiation.

## Claims

### Claim 1

A process, comprising:
disposing a radiation hard dielectric layer on a substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation or at least 4×1015 of 1 MeV equivalent neutron radiation;
patterning the radiation hard dielectric layer; and
treating the radiation hard dielectric layer.

### Claim 2 (depends on 1)

The process of claim 1, wherein the dielectric maintains at least a dielectric strength of 100 V/micron when exposed to at least 50 mrads of proton radiation or at least 4×1015 of 1 MeV equivalent neutron radiation.

### Claim 3 (depends on 1)

The process of claim 1, wherein treating the radiation hard dielectric layer comprises curing the radiation hard dielectric layer.

### Claim 4 (depends on 1)

The process of claim 1, further comprising forming and patterning one or more photoresist layer on the radiation hard dielectric layer.

### Claim 5 (depends on 4)

The process of claim 4, further comprising:
disposing bump metal on the one or more photoresist layer and in patterned openings of the radiation hard dielectric layer; and
removing the one or more photoresist layer and the bump metal on the one or more photoresist layer.

### Claim 6 (depends on 1)

The process of claim 1, wherein the radiation hard dielectric layer is disposed on the substrate by spin coating.

### Claim 7 (depends on 1)

The process of claim 1, wherein the radiation hard dielectric layer is treated using thermal, chemical or plasma based processing.

### Claim 8 (depends on 1)

The process of claim 1, wherein a first photoresist layer is formed on the radiation hard dielectric layer, and a second photoresist layer is formed on the first photoresist layer.

### Claim 9 (depends on 1)

The process of claim 1, wherein the bump metal is deposited using evaporation.

### Claim 10 (depends on 1)

The process of claim 1, wherein the bump metal is indium.

### Claim 11 (depends on 1)

The process of claim 1, wherein the radiation hard dielectric layer comprises a polyimide, a benzocyclobutene, an SU-8, a poly(p-xylylene) or derivatives thereof.