Memory device and method of operating the same
AssigneeSK hynix Inc.
InventorKa Young CHO
Life of this patent
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Abstract
A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines, a peripheral circuit configured to perform a program operation and a verify operation on selected memory cells among the plurality of memory cells, a compensation operation controller configured to determine a compensation value for a plurality of verify voltages according to a progress degree of the program operation and a target program state based on compensation information during the verify operation, and a verify operation controller configured to control the peripheral circuit to perform the verify operation on the selected memory cells among the plurality of memory cells based on the plurality of verify voltages and the compensation value.
Claims19
A memory device comprising:
- a memory cell array including a plurality of memory cells connected to a plurality of word lines;
- a peripheral circuit configured to perform a program operation on selected memory cells among the plurality of memory cells and a verify operation on the program operation;
- a compensation operation controller configured to determine a compensation value for a plurality of verify voltages according to a progress degree of the program operation and a target program state based on compensation information during the verify operation;
- and
- a verify operation controller configured to control the peripheral circuit to perform the verify operation on the selected memory cells among the plurality of memory cells based on the plurality of verify voltages and the compensation value.
A method of operating a memory device, the method comprising:
- a programming step of programming selected memory cells among a plurality of memory cells by using a program voltage;
- and
- a program verify step of verifying a threshold voltage of the selected memory cells by using a plurality of verify voltages,
- wherein the program verify step determines a plurality of compensation values respectively corresponding to the plurality of verify voltages based on compensation information, and verifies the threshold voltage of the selected memory cells based on the plurality of verify voltages and the plurality of compensation values.
A storage device comprising:
- a memory device including a plurality of memory cells connected to a plurality of word lines;
- and
- a memory controller configured to control the memory device,
- wherein the memory device comprises a peripheral circuit configured to perform a program operation on selected memory cells among the plurality of memory cells and a verify operation on the program operation, and control logic configured to control the peripheral circuit to determine a compensation value for a plurality of verify voltages according to a progress degree of the program operation and a target program state based on compensation information, and to perform the verify operation based on the plurality of verify voltages and the compensation value.
Dependencies are inferred from the claim text.