Integration of electronics with lithium niobate photonics
AssigneeRaytheon BBN Technologies Corp.
InventorsMoe Soltani, Jeffrey Laroche, Thomas Kazior
Life of this patent
Estimating the term…
Abstract
An electro-optical modulator assembly including a transistor including a gate, a drain, and a source disposed on a substrate, a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being integrated with the transistor on the substrate, and a metal connection coupled between the drain of the transistor and one of the first and second electrodes of the photonic modulator.
Claims18
An electro-optical modulator assembly comprising:
- a transistor including a gate, a drain, a source, and a film forming a channel layer for the transistor disposed on a substrate;
- a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being disposed on the film forming the channel layer for the transistor;
- and
- a metal connection coupled between the drain of the transistor and one of the first and second electrodes of the photonic modulator.
A method of manufacturing an electro-optical modulator assembly, the method comprising:
- forming a transistor including a gate, a drain, and a source disposed on a first substrate;
- forming a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being disposed on a second substrate;
- depositing an oxide layer over the gate, the drain, and the source of the transistor;
- and
- bonding the oxide layer of the transistor to the photonic modulator such that the photonic modulator is integrated with the transistor and the photonic modulator is disposed over a film forming a channel layer for the transistor.
Dependencies are inferred from the claim text.