Semiconductor structure having biosensor and manufacturing method thereof

A semiconductor structure, comprising:

• an isolation structure penetrating through a semiconductor substrate;
• a biosensor coupled to the semiconductor substrate and comprising:
• a bio-sensing device comprising a first field effect transistor (FET) and a first portion of a sensing film capacitively coupled to the first FET;
• a voltage-reference device spaced apart from the bio-sensing device, the voltage-reference device comprising a second FET and a second portion of the sensing film capacitively coupled to the second FET;
• first thermal management devices disposed in proximity to the bio-sensing device, each of the first thermal management devices comprising a gate dielectric layer underlying the isolation structure, a gate electrode underlying the gate dielectric layer, and gate spacers extending along sidewalls of the gate dielectric layer and gate electrode to land on the isolation structure;
• and
• a patterned dielectric layer disposed over the semiconductor substrate, and the patterned dielectric layer comprising sensing wells located above the voltage-reference device and the bio-sensing device;
• and
• a cover disposed over the patterned dielectric layer and comprising fluid channels communicating with the sensing wells.

A semiconductor structure, comprising:

• an isolation structure penetrating through a semiconductor substrate;
• a biosensor coupled to the semiconductor substrate and comprising:
• a bio-sensing device comprising a first field effect transistor (FET) and a first portion of a sensing film capacitively coupled to the first FET;
• a voltage-reference device spaced apart from the bio-sensing device, the voltage-reference device comprising a second FET and a second portion of the sensing film capacitively coupled to the second FET;
• thermal management devices disposed in proximity to the bio-sensing device, and each of the thermal management devices comprising a third FET;
• and
• a patterned dielectric layer disposed over the semiconductor substrate, and the patterned dielectric layer comprising sensing wells located above the voltage-reference device and the bio-sensing device and openings located above the thermal management devices;
• a cover disposed over the patterned dielectric layer and comprising fluid channels communicating with the sensing wells, and
• an interconnect structure underlying the semiconductor substrate and electrically coupled to the first FET, the second FET, and the third FET.