# US 2023/0407477 A1 · Substrate processing apparatus including improved exhaust structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0407477 A1 - Document ID: US20230407477A1 - Status: Published application - Kind: A1 - Application number: 18/209,659 - Filed: 2023-06-14 - Published: 2023-12-21 - Earliest claimed: 2022-06-17 - Assignees: ASM IP Holding B.V. - Applicants: ASM IP Holding B.V. - Inventors: Wei Chen Liao - Web page: https://patentgrep.com/patent/US20230407477A1 ## CPC - C23C 16/45542: {Plasma being used non-continuously during the ALD reactions} - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/45536: {Use of plasma, radiation or electromagnetic fields} - C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments} - C23C 16/45565: {Shower nozzles} - C23C 16/4558: {Perforated rings} - C23C 16/45591: {Fixed means, e.g. wings, baffles} - C23C 16/4585: {Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A substrate processing apparatus unit is disclosed. Exemplary substrate processing apparatus includes a reaction chamber provided with a reaction space; a susceptor disposed in the reaction chamber and configured to support a substrate, wherein the susceptor is configured to be vertically movable between a process position and a transfer position; a shower plate provided above the susceptor and configured to provide the reaction space with a gas; a gas exhaust unit configured to exhaust the gas from the reaction chamber, comprising: an exhaust duct surrounds the shower plate and provided with a main duct; a first flow control ring that surrounds the susceptor with a space when the susceptor is in the process position; and a second flow control ring surrounds the first flow control ring; wherein a first exhaust channel is formed between the exhaust duct and the first flow control ring; wherein a second exhaust channel is formed between the first flow control ring and the second control ring, and the second exhaust channel is fluidly connected to the main duct and an area below the susceptor. ## Claims ### Claim 1 A substrate processing apparatus comprising: a reaction chamber provided with a reaction space; a susceptor disposed in the reaction chamber and configured to support a substrate, wherein the susceptor is configured to be vertically movable between a process position and a transfer position; a shower plate provided above the susceptor and configured to provide the reaction space with a gas; a gas exhaust unit configured to exhaust the gas from the reaction chamber, comprising: an exhaust duct surrounds the shower plate and provided with a main duct; a first flow control ring that surrounds the susceptor with a space when the susceptor is in the process position; and a second flow control ring surrounds the first flow control ring; wherein a first exhaust channel is formed between the exhaust duct and the first flow control ring; wherein a second exhaust channel is formed between the first flow control ring and the second control ring, and the second exhaust channel is fluidly connected to the main duct and an area below the susceptor. ### Claim 2 (depends on 1) The substrate processing apparatus according to claim 1, the first gas flow control ring further comprising a plurality of protrusions configured to engage with an inner circumference of the second flow control ring. ### Claim 3 (depends on 1) The substrate processing apparatus according to claim 1, wherein the space is 0.5 to 2.5 mm. ### Claim 4 (depends on 1) The substrate processing apparatus according to claim 1, wherein the size of the first exhaust channel is 0.5 to 2.5 mm. ### Claim 5 (depends on 1) The substrate processing apparatus according to claim 1, wherein the size of the second exhaust channel is 0.5 to 2.5 mm. ### Claim 6 (depends on 1) The substrate processing apparatus according to claim 1, wherein the gas comprises a precursor gas, a reactant gas, and a first inert gas. ### Claim 7 (depends on 6) The substrate processing apparatus according to claim 6, wherein the precursor gas comprises at least one of: bis(diethylamino)silane (BDEAS), tetrakis(dimethylamino)silane (4DMAS), tris(dimethylamino)silane (3DMAS), bis(dimethylamino)silane (2DMAS), tetrakis(ethylmethylamino)silane (4EMAS), tris(ethylmethylamino)silane (3EMAS), bis(tertiary-butylamino)silane (BTBAS), and bis(ethylmethylamino)silane (BEMAS), Diisopropylamino silane (DIPAS), or combination thereof. ### Claim 8 (depends on 6) The substrate processing apparatus according to claim 6, wherein the reactant gas comprises at least one of: O2, N2O, CO2, or combination thereof. ### Claim 9 (depends on 6) The substrate processing apparatus according to claim 6, wherein the first inert gas comprises at least one of: He, Ar, N2, or combination thereof. ### Claim 10 (depends on 1) The substrate processing apparatus according to claim 1, wherein a second inert gas is configured to provide from an area below the susceptor to above the susceptor and the main duct through the space and the second exhaust channel. ### Claim 11 (depends on 1) The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus comprise plasma enhanced atomic layer deposition apparatus.