# US 2023/0407474 A1 · An atomic layer deposition apparatus and a method

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- Number: US 2023/0407474 A1
- Document ID: US20230407474A1
- Status: Published application
- Kind: A1
- Application number: 18/248,455
- Filed: 2021-10-11
- Published: 2023-12-21
- Earliest claimed: 2020-10-12
- Assignees: Beneq Oy
- Applicants: Beneq Oy
- Inventors: Mika JAUHIAINEN; Pekka SOININEN
- Web page: https://patentgrep.com/patent/US20230407474A1

## CPC

- C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments}
- H10P 72/3306: {Horizontal transfer of a single workpiece}
- C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps}
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/4588: {the substrate being rotated}
- H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins}
- H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel}
- H10P 72/7621: {characterised by supporting two or more semiconductor substrates}
- H10P 72/7626: {characterised by the construction of the shaft}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An atomic layer deposition apparatus and a method for processing a surface of a substrate successively with at least a first precursor and a second precursor. The apparatus includes a substrate support and a precursor supply head. The substrate support and the precursor supply head are arranged opposite to each other such that a reaction gap is provided between the substrate support and the precursor supply head. The apparatus further includes a moving mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The moving mechanism is arranged move the substrate support and the precursor supply head relative to each other in a moving direction such that the reaction gap is adjusted.

## Claims

### Claim at position 1

-16. (canceled)

### Claim 17

An atomic layer deposition apparatus for processing a surface of a substrate successively with at least a first precursor and a second precursor, the apparatus comprising:
a substrate support having a support surface and arranged to support one or more substrates;
a precursor supply head having an output face via which precursors are supplied;
the support surface of the substrate support and the output face of the precursor supply head being arranged opposite to each other such that a reaction gap is provided between the support surface of the substrate support and the output face of the precursor supply head; and
a moving mechanism, the substrate support and the precursor supply head are arranged to be rotated relative to each other with the moving mechanism such that the support surface of the substrate support and the output face of the precursor supply head are arranged to be rotated relative to each other,
wherein the moving mechanism is further arranged to move the substrate support and the precursor supply head relative to each other in a moving direction extending between the support surface of the substrate support and the output face of the precursor supply head such that the reaction gap is adjusted.

### Claim 18 (depends on 17)

The apparatus according to claim 17, wherein:
the moving mechanism is arranged to move the substrate support for moving the substrate support and the precursor supply head relative to each other in the moving direction between the support surface of the substrate support and the output face of the precursor supply head; or
the moving mechanism is arranged to move the precursor supply head for moving the substrate support and the precursor supply head relative to each other in the moving direction between the support surface of the substrate support and the output face of the precursor supply head.

### Claim 19 (depends on 17)

The apparatus according to claim 17, wherein:
the moving mechanism is arranged to rotate the substrate support for rotating the support surface of the substrate support and the output face of the precursor supply head are arranged to be rotated relative to each other; or
the moving mechanism is arranged to rotate the precursor supply head for rotating the support surface of the substrate support and the output face of the precursor supply head are arranged to be rotated relative to each other.

### Claim 20 (depends on 17)

The apparatus according to claim 17, wherein:
the output face of the precursor supply head and the support surface of the substrate support are arranged parallel to each other such that a uniform reaction gap is provided between the support surface of the substrate support and the output face of the precursor supply head; and
the moving mechanism is arranged to move the substrate support and the precursor supply head relative to each other in the moving direction extending perpendicularly to the support surface of the substrate support.

### Claim 21 (depends on 17)

The apparatus according to claim 17, wherein:
the moving mechanism comprises a rotating axis around which the substrate support and the precursor supply head are arranged to be rotated relative to each other; and
the rotating axis is arranged perpendicularly to the support surface, or the rotating axis is arranged parallel to the moving direction.

### Claim 22 (depends on 17)

The apparatus according to claim 17, wherein:
the moving mechanism comprises a rotating mechanism arranged to rotate the substrate support and the precursor supply head relative to each; and
the moving mechanism comprises a transfer mechanism arranged to move the substrate support and the precursor supply head relative to each other in the moving direction; or
the moving mechanism comprises a rotating mechanism arranged to rotate the substrate support; and
the moving mechanism comprises a transfer mechanism arranged to move the substrate support in the moving direction.

### Claim 23 (depends on 17)

The apparatus according to claim 17, wherein:
the moving mechanism is arranged to move the substrate support in the moving direction,
the substrate support comprises a back surface opposite the support surface, and the substrate support further comprises one or more through holes extending through the substrate support between the back surface and the support surface in the moving direction, and
the apparatus further comprises a loading support extending in the moving direction, the loading support being arranged to fit through the one or more through holes upon moving the substrate support with the moving mechanism in the moving direction and relative to the loading support.

### Claim 24 (depends on 23)

The apparatus according to claim 23, wherein:
the moving mechanism is arranged to move the substrate support in the moving direction to a process position in which the loading support is below the support surface of the substrate support, and
the moving mechanism is arranged to move the substrate support in the moving direction to a loading position in which the loading support is above the support surface of the substrate support.

### Claim 25 (depends on 17)

The apparatus according to claim 17, wherein:
the apparatus further comprises a loading device arranged to load and unload substrates to the reaction gap between the support surface of the substrate support and the output face of the precursor supply head; or
the apparatus further comprises a loading device arranged to load and unload substrates to the reaction gap between the support surface of the substrate support and the output face of the precursor supply head in a loading direction, the loading direction being transverse or perpendicular to the moving direction.

### Claim 26

A method for operating an atomic layer deposition apparatus, the apparatus comprising:
a substrate support having a support surface and arranged to support one or more substrates;
a precursor supply head having an output face via which precursors are supplied; and
the support surface of the substrate support and the output face of the precursor supply head being arranged opposite to each other such that a reaction gap is provided between the support surface of the substrate support and the output face of the precursor supply head, the method comprising:
rotating the substrate support and the precursor supply head relative to each other with the moving mechanism during processing the one or more substrates such that the support surface of the substrate support and the output face of the precursor supply head are arranged to be rotated relative to each other, and
moving the substrate support and the precursor supply head relative to each other in a moving direction extending between the support surface of the substrate support and the output face of the precursor supply head such that the reaction gap is adjusted for adjusting reaction gap.

### Claim 27 (depends on 26)

The method according to claim 26, wherein:
moving the substrate support relative to the precursor supply head in the moving direction for adjusting reaction gap; or
moving the precursor supply head relative to the substrate support in the moving direction for adjusting reaction gap.

### Claim 28 (depends on 26)

The method according to claim 26, wherein the output face of the precursor supply head and the support surface of the substrate support are arranged parallel to each other such that a uniform reaction gap is provided between the support surface of the substrate support and the output face of the precursor supply head, and the method comprises moving the substrate support and the precursor supply head relative to each other in the moving direction extending perpendicularly to the support surface of the substrate support.

### Claim 29 (depends on 26)

The method according to claim 26, wherein the method comprises moving the substrate support in the moving direction to a process position in which the reaction gap has a first gap height, and moving the substrate support in the moving direction to a loading position in which the reaction gap has a second gap height, the second gap height being greater than the first gap height.

### Claim 30 (depends on 29)

The method according to claim 29, wherein the method comprises:
moving the substrate support in the moving direction to the loading position;
loading one or more substrates to the reaction gap in a loading direction, the loading direction being transverse or perpendicular to the moving direction; and
moving the substrate support in the moving direction to the process position; or
moving the substrate support in the moving direction to the loading position;
loading one or more substrates to the reaction gap in a loading direction, the loading direction being transverse or perpendicular to the moving direction;
moving the substrate support in the moving direction to the process position;
processing the one or more substrates by supplying precursors to the reaction gap via the output face of the precursor supply head;
moving the substrate support in the moving direction to the loading position; and
unloading the one or more substrates from the reaction gap in the loading direction.

### Claim 31 (depends on 29)

The method according to claim 29, wherein:
the substrate support comprises a back surface opposite the support surface, and the substrate support further comprises one or more through holes extending through the substrate support between the back surface and the support surface in the moving direction; and
the apparatus further comprises a loading support extending in the moving direction, the loading support being arranged to fit through the one or more through holes upon moving the substrate support with the moving mechanism in the moving direction and relative to the loading support,
the method comprises:
moving the substrate support in the moving direction to the loading position in which the reaction gap has the second height and in which the loading support extends through the one or more through holes above the support surface of the substrate support, and
moving the substrate support in the moving direction to the process position in which the reaction gap has the first height and in which the loading support is below the support surface of the substrate support; or
moving the substrate support in the moving direction to the loading position in which the reaction gap has the second height and in which the loading support extends through the one or more through holes above the support surface of the substrate support,
loading a substrate on the loading support in the loading direction, and
moving the substrate support in the moving direction to the process position in which the reaction gap has the first height and in which the loading support is below the support surface of the substrate support such that the substrate is placed on the support surface of the substrate support during the moving of the substrate support from the loading position to the process position; or
moving the substrate support in the moving direction to the loading position in which the reaction gap has the second height and in which the loading support extends through the one or more through holes above the support surface of the substrate support,
loading a substrate on the loading support in the loading direction,
moving the substrate support in the moving direction to the process position in which the reaction gap has the first height and in which the loading support is below the support surface of the substrate support such that the substrate is placed on the support surface of the substrate support during the moving of the substrate support from the loading position to the process position,
processing the one or more substrates by supplying precursors to the reaction gap via the output face of the precursor supply head, and
moving the substrate support in the moving direction to the loading position in which the reaction gap has the second height and in which the loading support extends through the one or more through holes above the support surface of the substrate support such that the substrate is placed on the loading support during the moving of the substrate support from the process position to the loading position.

### Claim 32 (depends on 26)

The method according to claim 26, wherein the method is carried out with an atomic layer deposition apparatus for processing a surface of a substrate successively with at least a first precursor and a second precursor, the apparatus comprising:
a substrate support having a support surface and arranged to support one or more substrates;
a precursor supply head having an output face via which precursors are supplied;
the support surface of the substrate support and the output face of the precursor supply head being arranged opposite to each other such that a reaction gap is provided between the support surface of the substrate support and the output face of the precursor supply head; and
a moving mechanism, the substrate support and the precursor supply head are arranged to be rotated relative to each other with the moving mechanism such that the support surface of the substrate support and the output face of the precursor supply head are arranged to be rotated relative to each other,
wherein the moving mechanism is further arranged to move the substrate support and the precursor supply head relative to each other in a moving direction extending between the support surface of the substrate support and the output face of the precursor supply head such that the reaction gap is adjusted.