METHOD OF FORMING SiOCN LAYER

A method of forming a silicon oxycarbonitride layer, the method comprising:

• providing a substrate within a reaction chamber of a reactor;
• forming a layer comprising SiOC, the step of forming the layer comprising SiOC comprising:
• providing a first silicon precursor within the reaction chamber to thereby form first silicon species on the surface of the substrate;
• providing a first reactant to the reaction chamber;
• and
• forming activated species from the first reactant;
• forming a layer comprising SiCN, the step of forming the layer comprising SiCN comprising:
• providing a second silicon precursor within the reaction chamber to thereby form second silicon species on the surface of the substrate;
• providing a second reactant to the reaction chamber;
• and
• forming activated species from the second reactant,
• wherein the first silicon precursor and the second silicon precursor differ, and
• wherein the first reactant and the second reactant do not comprise nitrogen.