Method of forming patterns

A method of forming patterns, the method comprising:

• providing a material layer on a substrate,
• applying a hardmask composition on the material layer,
• heat-treating the hardmask composition to form a hardmask layer,
• forming a photoresist layer on the hardmask layer,
• exposing and developing the photoresist layer to form a photoresist pattern,
• selectively removing the hardmask layer using the photoresist pattern to expose a portion of the material layer, and
• etching an exposed portion of the material layer,
• wherein:
• the hardmask composition includes:
• a solvent, and
• a polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2:
• in Chemical Formula 1 and Chemical Formula 2,
• E is a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or a combination thereof,
• A is a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof,
• L is a single bond, O, S, NRa, a carbonyl group, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof,
• Ra and R1 are each independently a hydrogen, a hydroxy group, a halogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or a combination thereof,
• p and q are each independently an integer of 0 to 4,
• r is an integer of 1 to 5, and
• * is a linking point.