Memory device having a switching element thicker at a first side than at a second side and method of forming the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsJu Dy LIM, Mei Zhen NG, Kazutaka YAMANE, Chim Seng SEET
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Abstract
A memory device may be provided, including a first planar electrode, a second planar electrode, and a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode. The switching element is thicker at the first side than the second side, and the switching element is configured to provide a conductive filament formation region.
Claims20
A memory device, comprising:
- a first planar electrode;
- a second planar electrode;
- a switching element arranged between the first planar electrode and the second planar electrode, wherein a first side of the switching element is arranged nearer the first planar electrode and a second side of the switching element is arranged nearer the second planar electrode,
- wherein a width or diameter of the switching element at the first side is greater than a width or diameter of the switching element at the second side, wherein the switching element is configured to provide a conductive filament formation region;
- and
- a component arranged between the second side of the switching element and the second planar electrode, wherein a first side of the component is arranged nearer the first planar electrode and a second side of the component is arranged nearer the second planar electrode, wherein the component is conductive and in electrical communication with the second planar electrode, wherein the component comprises a nanopillar.
A method of forming a memory device, the method comprising:
- providing a first planar electrode;
- providing a switching element over the first planar electrode;
- providing a second planar electrode over the switching element;
- and
- providing a component arranged between the switching element and the second planar electrode,
- wherein a first side of the switching element is arranged nearer the first planar electrode and a second side of the switching element is arranged nearer the second planar electrode, wherein a width or diameter of the switching element at the first side is greater than a width or diameter of the switching element at the second side, wherein the switching element is configured to provide a conductive filament formation region, and
- wherein the component is arranged between the second side of the switching element and the second planar electrode, wherein a first side of the component is arranged nearer the first planar electrode and a second side of the component is arranged nearer the second planar electrode, wherein the component is in electrical communication with the second planar electrode, wherein the component comprises a nanopillar.
Dependencies are inferred from the claim text.