Magneto-resistive random access memory with tapered sidewalls

Abstract

A memory device includes a magnetic tunnel junction pillar extending vertically from a bottom electrode. The magnetic tunnel junction pillar includes a top portion and a bottom portion, the top portion of the magnetic tunnel junction pillar has first opposite sidewalls including a positive taper profile, while the bottom portion of the magnetic tunnel junction has second opposite sidewalls including a negative taper profile. A first encapsulation layer is disposed along the first opposite sidewalls of the top portion of the magnetic tunnel junction pillar, and a second encapsulation layer is disposed along the second opposite sidewalls of the bottom portion of the magnetic tunnel junction pillar. The first and second encapsulation layers can be made of the same or different materials.

Dependencies are inferred from the claim text.