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US 2023/0403941 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Po-kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.
Claims5
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate;
- a cap layer adjacent to the MTJ and extended to overlap a top surface of the MTJ;
- and
- a first inter-metal dielectric (IMD) layer around the MTJ and the cap layer, wherein a top surface of the cap layer is higher than a top surface of the first IMD layer.
1 more element
Dependencies are inferred from the claim text.