Solid-state imaging device and electronic apparatus

Abstract

The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged in a matrix, in which each of the pixels includes a first semiconductor layer, a photoelectric conversion section disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring extending from the second surface of the first semiconductor layer, a floating diffusion region connected to the first semiconductor layer via the wiring, and a first gate electrode disposed close to the wiring.

Dependencies are inferred from the claim text.