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US 2023/0403841 A1Published application
Semiconductor structure manufacturing method and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorsDaohuan FENG, Xiaojie LI
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Abstract
A semiconductor structure manufacturing method includes: providing a substrate and forming a groove in the substrate; forming a barrier layer on a sidewall of the groove; epitaxially growing a channel material from a bottom of the groove to form an intermediate structure in the groove; and removing a portion of the intermediate structure and a portion of the substrate to form a fin structure.
Claims19
A semiconductor structure manufacturing method, comprising:
- providing a substrate and forming a groove in the substrate;
- forming a barrier layer on a sidewall of the groove;
- epitaxially growing a channel material from a bottom of the groove to form an intermediate structure in the groove;
- and
- removing a portion of the intermediate structure and a portion of the substrate to form a fin structure.
2 more elements
Dependencies are inferred from the claim text.