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US 2023/0403003 A1Published application
Integrated resistor-transistor-capacitor snubber
AssigneeSemiconductor Components Industries, LLC
InventorsJaume ROIG-GUITART, Dean E. PROBST, Ashok Challa
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Abstract
A circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a snubber circuit coupled between a drain and a source of the MOSFET. The snubber circuit includes a transistor disposed in parallel to the MOSFET. The transistor has a floating gate. The circuit further includes a capacitor in series with the transistor, and a resistor disposed parallel to the capacitor.
Claims20
A circuit comprising:
- a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain;
- and
- a snubber circuit coupled between the drain and the source, the snubber circuit including:
- a transistor disposed in parallel to the MOSFET, the transistor having a floating gate;
- a capacitor in series with the transistor;
- and
- a resistor disposed parallel to the capacitor.
4 more elements
A semiconductor die comprising:
- a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain;
- and
- a snubber circuit including a transistor disposed in parallel to the MOSFET between the source and the drain, the transistor having a floating gate.
A method comprising:
- disposing a snubber circuit in parallel with a switching element, the snubber circuit including a snubber transistor having a floating gate;
- integrating the snubber circuit with the switching element on a semiconductor die;
- and
- capacitively coupling a voltage on a drain of the switching element to the floating gate of the snubber transistor.
1 more element
Dependencies are inferred from the claim text.