Resonator
AssigneeMurata Manufacturing Co., Ltd.
InventorToshio NISHIMURA
Life of this patent
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Abstract
A resonator is provided that includes a piezoelectric layer having a first and second surfaces that oppose each other, an IDT electrode on the first surface of the piezoelectric layer, and a high acoustic velocity substrate on the second surface of the piezoelectric layer. The piezoelectric layer is made from a quartz crystal having cut-angles obtained by rotating a plane orthogonal to a crystal Y-axis about a crystal X-axis, in a propagation direction at 90°±10° to the crystal X-axis of the piezoelectric layer, an acoustic velocity in the high acoustic velocity substrate is higher than an acoustic velocity in the piezoelectric layer, and the IDT electrode includes a comb-shaped electrode including multiple electrode fingers aligned in the propagation direction.
Claims20
A resonator comprising:
- a piezoelectric layer having first and second surfaces that oppose each other;
- an IDT electrode on the first surface of the piezoelectric layer;
- and
- a high acoustic velocity substrate on the second surface of the piezoelectric layer,
- wherein the piezoelectric layer comprises a quartz crystal having cut-angles obtained by rotating a plane orthogonal to a crystal Y-axis about a crystal X-axis,
- wherein, in a propagation direction at 90°±10° to the crystal X-axis of the piezoelectric layer, an acoustic velocity in the high acoustic velocity substrate is higher than an acoustic velocity in the piezoelectric layer, and
- wherein the IDT electrode includes a comb-shaped electrode including a plurality of electrode fingers aligned in the propagation direction.
A resonator comprising:
- a piezoelectric layer having first and second surfaces that oppose each other and comprising a quartz crystal having cut-angles obtained by rotating a plane orthogonal to a crystal Y-axis about a crystal X-axis;
- an IDT electrode on the first surface of the piezoelectric layer;
- and
- a substrate on the second surface of the piezoelectric layer and having an acoustic velocity, in a propagation direction at 90°±10° to the crystal X-axis of the piezoelectric layer, that is higher than an acoustic velocity in the piezoelectric layer.
Dependencies are inferred from the claim text.