Forming integrated electronic devices for converting and downscaling alternating current
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Ku LIN, Ru-Yi SU, Haw-Yun WU, Chun-Lin TSAI
Life of this patent
Estimating the term…
Abstract
Bonding a full-bridge device and an LLC device in a stack, or forming the full-bridge device and the LLC device on a same substrate, rather than connecting the devices, reduces a chip area associated with a power converter including the full-bridge device and the LLC device. Additionally, the full-bridge device and the LLC device consume less power because parasitic inductance and capacitance are reduced. Additionally, raw materials and production time are conserved that would otherwise have been used to connect the full-bridge device and the LLC device (e.g., via wires).
Claims20
A method, comprising:
- forming a first gate over a first substrate for driving a first drain associated with a full-bridge device for converting alternating current to direct current;
- forming a second gate over a second substrate for driving a second drain associated with an inductor-inductor-capacitor (LLC) device for reducing a voltage of the direct current;
- stacking and bonding the second substrate and the first substrate together to form an integrated device;
- and
- forming a plurality of redistribution layers (RDLs) connected to the first drain, the second drain, and sources associated with the first drain and the second drain.
A method, comprising:
- forming a first gate over a first portion of a substrate for driving a first drain associated with a full-bridge device for converting alternating current to direct current;
- forming a second gate over a second portion of the substrate for driving a second drain associated with an inductor-inductor-capacitor (LLC) device for reducing a voltage of the direct current;
- forming one or more isolations structures to isolate the first gate from the second gate;
- and
- forming a plurality of redistribution layers (RDLs) connected to the first drain, the second drain, and sources associated with the first drain and the second drain.
A device, comprising:
- a dielectric layer;
- a first gate in the dielectric layer for driving a first drain associated with a full-bridge device for converting alternating current to direct current;
- a second gate in the dielectric layer for driving a second drain associated with an inductor-inductor-capacitor (LLC) device for reducing a voltage of the direct current;
- and
- an insulating structure between the first gate and the second gate.
Dependencies are inferred from the claim text.