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US 2023/0402822 A1Published application
Manufacturing method of semiconductor device
AssigneesNational Tsing Hua University, Turning Point Lasers Corporation
InventorsCi-Ling Pan, Chi-Luen Wang, Hung-Sheng Lee, Li-Chang Tsou, Tzu-Neng Lin
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Abstract
A manufacturing method of a semiconductor device includes: providing a semiconductor stack layer, wherein the semiconductor stack layer includes a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence; growing an aluminum nitride layer on the second type semiconductor layer; and annealing the aluminum nitride layer to achieve quantum well intermixing.
Claims10
A manufacturing method of a semiconductor device, comprising:
- providing a semiconductor stack layer, wherein the semiconductor stack layer comprises a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence;
- growing an aluminum nitride layer on the second type semiconductor layer;
- and
- annealing the aluminum nitride layer to achieve quantum well intermixing.
1 more element
Dependencies are inferred from the claim text.