Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsTomonori MIZUSHIMA, Tatsuya NAITO
Life of this patent
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Abstract
There is provided a semiconductor device in which the transistor portion has a first transistor region provided with the emitter region, the contact region, and the first base region; a second transistor region which is provided with the emitter region and the contact region and which is provided between the first transistor region and the diode portion; and a boundary region which includes the second base region and which is provided between the second transistor region and the diode portion, and at a front surface of the semiconductor substrate, an area of the contact region in the second transistor region is smaller than an area of the contact region in the first transistor region.
Claims14
A semiconductor device comprising a semiconductor substrate that has a transistor portion and a diode portion and that is provided with a plurality of trench portions, wherein
- the semiconductor substrate has:
- a drift region of a first conductivity type;
- a first base region of a second conductivity type provided above the drift region;
- a second base region of the second conductivity type which is provided above the drift region and which has a doping concentration lower than that of the first base region;
- an emitter region of the first conductivity type which is provided above the first base region and which has a doping concentration higher than that of the drift region;
- and
- a contact region of the second conductivity type which is provided above the first base region and the second base region and which has a doping concentration higher than that of the first base region,
- the transistor portion has:
- a first transistor region provided with the emitter region, the contact region, and the first base region;
- a second transistor region which is provided with the emitter region and the contact region and which is provided between the first transistor region and the diode portion;
- and
- a boundary region which includes the second base region and which is provided between the second transistor region and the diode portion, and
- at a front surface of the semiconductor substrate, an area of the contact region in the second transistor region is smaller than an area of the contact region in the first transistor region.
Dependencies are inferred from the claim text.