Method for manufacturing semiconductor structure with single side capacitor

Abstract

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes: providing a substrate; forming a first nitride layer, a first sacrificial layer, a second nitride layer, a second sacrificial layer and a third nitride layer in sequence over the substrate; forming a first opening and a second opening, wherein the first opening exposes a first landing pad in the substrate, and the second opening exposes a second landing pad in the substrate; forming a first electrode in the first opening and a second electrode in the second opening; removing the first sacrificial layer and the second sacrificial layer concurrently; and forming a conductive layer, conformal to the first electrode, the second electrode, the first nitride layer, the second nitride layer and the third nitride layer.

Dependencies are inferred from the claim text.