Pixel sensor including refraction structures

A method for forming a pixel sensor, comprising:

• forming, in a substrate, a photodiode;
• forming, in the substrate, a deep trench isolation (DTI) structure, one or more refraction structures, and an absorption region,
• wherein the DTI structure is formed to at least partially surround the photodiode, the one or more refraction structures are formed within the DTI structure, and the absorption region increases an absorption of an incident light for the photodiode;
• and
• filling the DTI structure, the one or more refraction structures, and the absorption region with an oxide material.

A method for forming a pixel sensor, comprising:

• forming, in a substrate, a deep trench isolation (DTI) structure, a plurality of refraction structures, and an absorption region,
• wherein the DTI structure is formed to at least partially surround a photodiode in the substrate, the plurality of refraction structures and absorption region are formed within the DTI structure, and the absorption region increases an absorption of an incident light for the photodiode;
• filling the DTI structure, the plurality of refraction structures, and the absorption region with an oxide material;
• and
• forming a micro-lens layer over the DTI structure, the plurality of refraction structures, and the absorption region.