Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Kwan SEO, Nosan Park, Jung-Kuk Park, Jinsu Park, Kookki Lee, Seul-Young Jeong
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Abstract
An image sensor includes a first substrate including pixel regions, each of the pixel regions including a photoelectric conversion region, color filters on the pixel regions, the color filters on a first surface of the first substrate, micro lenses on the color filters, and a lens coating layer on the micro lenses. The lens coating layer includes a first coating layer and a second coating layer, the second coating layer is on the first coating layer, the first and second coating layers include a same material, and a density of the second coating layer is greater than a density of the first coating layer.
Claims20
An image sensor comprising:
- a first substrate including pixel regions, each of the pixel regions including a photoelectric conversion region;
- color filters on the pixel regions, the color filters on a first surface of the first substrate;
- micro lenses on the color filters;
- and
- a lens coating layer on the micro lenses, the lens coating layer including a first coating layer and a second coating layer, the second coating layer on the first coating layer, the first and second coating layers including a same material, and a density of the second coating layer greater than a density of the first coating layer.
An image sensor comprising:
- a first substrate including pixel regions, each of the pixel regions including a photoelectric conversion region;
- color filters on the pixel regions, the color filters on a first surface of the first substrate;
- a fence pattern dividing the color filters;
- a protective layer between the fence pattern and the color filters;
- micro lenses on the color filters;
- and
- a lens coating layer on the micro lenses, the protective layer including a first protective layer and a second protective layer, the first protective layer and the second protective layer sequentially stacked, the first protective layer including aluminum oxide or hafnium oxide, and the second protective layer including silicon oxide.
An image sensor comprising:
- a circuit chip;
- and
- an image sensor chip stacked on the circuit chip, the image sensor chip including
- a first substrate comprising photoelectric conversion regions, the first substrate including a first surface and a second surface, and the first surface and the second surface opposite to each other,
- an isolation pattern in the first substrate to define the photoelectric conversion regions,
- an insulating layer covering the first surface,
- color filters on the insulating layer,
- a fence pattern dividing the color filters,
- a protective layer between the fence pattern and the color filters,
- micro lenses on the color filters,
- a lens coating layer on the micro lenses,
- a device isolation pattern adjacent to the second surface to define an active region,
- a buried gate pattern on the second surface, and
- a first interconnection layer on the buried gate pattern,
- the circuit chip including a second substrate, integrated circuits, and a second interconnection layer, the second interconnection layer on the second substrate, the first interconnection layer and the second interconnection layer facing each other and electrically connected to each other, and the integrated circuits on the second substrate, and
- the lens coating layer including a first coating layer and a second coating layer, the second coating layer on the first coating layer, the first and second coating layers including a same material, and a density of the second coating layer greater than a density of the first coating layer.
Dependencies are inferred from the claim text.