Three-dimensional memory device and fabrication method
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhiyong LU, Sheng PENG, Kai YU, Wenbo ZHANG, Yang ZHOU, Jing GAO
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Abstract
Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, forming a dielectric layer of a dielectric material including atomic hydrogen over a part of the conductor/insulator stack, and performing a thermal process to release the atomic hydrogen from the dielectric material and diffuse the atomic hydrogen into the conductor/insulator stack.
Claims20
A method for fabricating a three-dimensional (3D) memory device, comprising:
- forming a conductor/insulator stack over a substrate;
- forming a dielectric layer of a dielectric material including atomic hydrogen over the conductor/insulator stack;
- and
- performing a thermal process to release the atomic hydrogen from the dielectric material and diffuse the atomic hydrogen into the conductor/insulator stack.
A three-dimensional (3D) memory device, comprising:
- a conductor/insulator stack;
- a dielectric layer of a dielectric material including atomic hydrogen, the dielectric layer being proximate to the conductor/insulator stack;
- and
- a plurality of vias through the dielectric layer.
A memory apparatus, comprising:
- an input/output (I/O) component for receiving an input;
- a buffer for buffering a signal;
- a controller for implementing an operation;
- and
- a three-dimensional (3D) memory device, the 3D memory device comprising:
- a conductor/insulator stack;
- a dielectric layer of a dielectric material including atomic hydrogen, the dielectric layer being proximate to the conductor/insulator stack;
- and
- a plurality of vias through the dielectric layer.
Dependencies are inferred from the claim text.