Wafer Level Multi-Die Structure Formation

A wafer-level structure, comprising:

• a plurality of integrated circuit (IC) dies formed over a substrate, wherein the IC dies have substantially identical IC layouts;
• a plurality of first seal rings that each surrounds a respective one of the IC dies in a top view, wherein each of the first seal rings includes a plurality of first openings;
• a plurality of first structures disposed between adjacent ones of the IC dies but outside the first seal rings, wherein the first structures include test structures, dummy structures, process monitor patterns, alignment marks, or overlay marks;
• a plurality of electrical interconnection elements that extend through the first openings to electrically interconnect the IC dies with one another to form a multi-die IC, the multi-die IC including the first structures;
• a second seal ring that surrounds the multi-die IC in the top view, wherein the first seal rings are collectively surrounded by the second seal ring, and wherein the first seal rings and the second seal ring each includes a plurality of metal lines and vias disposed vertically between the metal lines;
• and
• one or more second structures formed in regions of the substrate outside of the second seal ring in the top view, wherein none of the one or more second structures is surrounded by more than one seal ring in the top view.

A method, comprising:

• performing a plurality of lithography processes to form a plurality of first integrated circuit (IC) dies over a substrate, wherein the first IC dies are substantially identical to one another and are arranged into an array of rows and columns;
• forming a plurality of first seal rings to surround each of the first IC dies in a top view, wherein each of the first seal rings has gaps therein;
• forming a plurality of sets of conductive elements that extend through the gaps of the first seal rings to electrically interconnect the first IC dies together into a multi-die structure, wherein each set of conductive elements is electrically coupled to two adjacent ones of the first IC dies;
• forming a second seal ring that surrounds the first IC dies, the first seal rings, and the conductive elements in the top view;
• forming one or more test structures, one or more dummy structures, one or more process monitor patterns, one or more alignment marks, or one or more overlay marks in regions of the multi-die structure that are located within the second seal ring but outside of each of the first seal rings;
• and
• performing a dicing process along scribe lines located outside of the second seal ring, wherein no regions inside the second seal ring are diced.