Graphene-metal hybrid interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian-Hong LIN, Yinlung LU, Jun HE, Hsuan-Ming HUANG, Hsin-Chun CHANG
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian-Hong LIN, Yinlung LU, Jun HE, Hsuan-Ming HUANG, Hsin-Chun CHANG
Estimating the term…
Material properties of graphene can be leveraged to improve performance of interconnects in an integrated circuit. One way to circumvent challenges involved in depositing graphene onto a copper surface is to incorporate graphene into the bulk metal layer to create a hybrid metal/graphene interconnect structure. Such a hybrid structure can be created instead of, or in addition to, forming a graphene film on the metal surface as a metal capping layer. A first method for embedding graphene into a copper damascene layer is to alternate the metal fill process with graphene deposition to create a composite graphene matrix. A second method is to implant carbon atoms into a surface layer of metal. A third method is to disperse graphene flakes in a damascene copper plating solution to create a distributed graphene matrix. Any combination of these methods can be used to enhance conductivity of the interconnect.
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