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US 2023/0402371 A1Published application
Method for fabricating semiconductor device with fuse structure
AssigneeNanya Technology Corporation
InventorHSIH-YANG CHIU
Life of this patent
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Abstract
A method for fabricating a semiconductor device is provided. The method includes providing a substrate; forming a fuse element within the substrate and extending from an upper surface of the substrate; and forming a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate.
Claims20
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a fuse element within the substrate;
- and
- forming a fuse medium surrounding a lateral surface of the fuse element.
1 more element
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a fuse element within the substrate and extending from an upper surface of the substrate;
- and
- forming a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate.
1 more element
Dependencies are inferred from the claim text.